A method was developed for studying the thermal motions of the atoms in vitreous SiOsub2. Each Si ion is considered to be contained in the field arising from 4 O atoms tetrahedrally arranged around the Si, with 4 Si's at twice the Si-O distance and lying along the extension of the Si-O lines, and 12 O's at a slightly greater distance. Tentative specific-heat calculations were made based on various forms of binding between atoms and on vibrations of single atoms independent of their neighbors. A modification of the Einstein treatment of the specific heat is considered as an approximation to the Debye method with a retention of the connection between the calculations and the atomic model. Vibrations of 1 or more SiOsub2 groups as a compact unit could be studied instead of each isolated ion. With the proper assumptions of interatomic forces, a specific heat curve could be computed to fit the experimental data. An electrical analog is considered in which charge movements are determined by exactly the same equations of motion as would govern ion movements.